DN3535N8-G

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Mfr.Part #
DN3535N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 230MA TO243AA
Stock
43,647
In Stock :
43,647

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Package Shape :
RECTANGULAR
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
1.6W Ta
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
40
Drain to Source Breakdown Voltage :
350V
RoHS Status :
ROHS3 Compliant
Terminal Form :
Flat
FET Feature :
Depletion Mode
Transistor Element Material :
SILICON
Channel Mode :
Depletion
Mount :
Surface Mount
Number of Terminations :
3
Packaging :
Tape and Reel (TR)
Product Type :
MOSFET
JEDEC-95 Code :
TO-243AA
Channel Type :
N
Continuous Drain Current Id :
230
Turn On Delay Time :
15 ns
Fall Time (Typ) :
20 ns
Drain to Source Voltage (Vdss) :
350V
Terminal Finish :
Matte Tin (Sn)
Published :
2008
Supplier Device Package :
TO-243AA (SOT-89)
Base Product Number :
DN3535
Weight :
52.786812mg
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Continuous Drain Current (ID) :
230mA
Number of Elements :
1
Pin Count :
4
Product Status :
Active
RoHS :
Details
Type :
FET
Current - Continuous Drain (Id) @ 25°C :
230mA Tj
Drain-source On Resistance-Max :
10 Ω
Minimum Operating Temperature :
-55 °C
Package Type :
TO-243AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product :
MOSFET Small Signal
Number of Channels :
1
JESD-30 Code :
R-PSSO-F3
Gate to Source Voltage (Vgs) :
20V
Element Configuration :
Single
Radiation Hardening :
No
Vgs (Max) :
±20V
Rise Time :
20ns
Brand :
Microchip Technology / Atmel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
1.6W (Ta)
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Transistor Type :
1 N-Channel
Lead Free :
Lead Free
JESD-609 Code :
e3
Number of Elements per Chip :
1
MSL :
MSL 1 - Unlimited
Operating Mode :
Depletion Mode
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
10 Ω @ 150mA, 0V
Series :
--
Contact Plating :
Tin
Case Connection :
DRAIN
Maximum Operating Temperature :
+150 °C
HTS Code :
8541.90.00.00
Length :
4.6mm
Product Category :
MOSFET
Qualification Status :
Not Qualified
Factory Lead Time :
18 Weeks
Mounting Style :
SMD/SMT
Number of Terminals :
3
Vgs(th) (Max) @ Id :
--
Width :
2.6mm
Manufacturer :
Microchip
Package / Case :
TO-243AA
Configuration :
Single
Surface Mount :
yes
FET Type :
N-Channel
Power Dissipation :
1.6W
Peak Reflow Temperature (Cel) :
260
Reach Compliance Code :
Compliant
Transistor Polarity :
N-Channel
Qualification :
-
ECCN Code :
EAR99
Turn-Off Delay Time :
20 ns
Pulsed Drain Current-Max (IDM) :
0.5A
Subcategory :
MOSFETs
Drive Voltage (Max Rds On,Min Rds On) :
0V
Height :
1.6mm
REACH SVHC :
No SVHC
Number of Pins :
3
Additional Feature :
HIGH INPUT IMPEDANCE
Datasheets
DN3535N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3535N8-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Type:FET, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-243AA, Number of Pins:3, DN3535N8-G pinout, DN3535N8-G datasheet PDF, DN3535N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3535N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3535N8-G


N-Channel Tape & Reel (TR) 10 Ω @ 150mA, 0V ±20V 360pF @ 25V 350V TO-243AA

DN3535N8-G Overview


The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.5A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3535N8-G Features


a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)


DN3535N8-G Applications


There are a lot of Microchip Technology
DN3535N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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