DN3535N8-G
- Mfr.Part #
- DN3535N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 230MA TO243AA
- Stock
- 43,647
- In Stock :
- 43,647
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Shape :
- RECTANGULAR
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 1.6W Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Drain to Source Breakdown Voltage :
- 350V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Flat
- FET Feature :
- Depletion Mode
- Transistor Element Material :
- SILICON
- Channel Mode :
- Depletion
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Product Type :
- MOSFET
- JEDEC-95 Code :
- TO-243AA
- Channel Type :
- N
- Continuous Drain Current Id :
- 230
- Turn On Delay Time :
- 15 ns
- Fall Time (Typ) :
- 20 ns
- Drain to Source Voltage (Vdss) :
- 350V
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2008
- Supplier Device Package :
- TO-243AA (SOT-89)
- Base Product Number :
- DN3535
- Weight :
- 52.786812mg
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Continuous Drain Current (ID) :
- 230mA
- Number of Elements :
- 1
- Pin Count :
- 4
- Product Status :
- Active
- RoHS :
- Details
- Type :
- FET
- Current - Continuous Drain (Id) @ 25°C :
- 230mA Tj
- Drain-source On Resistance-Max :
- 10 Ω
- Minimum Operating Temperature :
- -55 °C
- Package Type :
- TO-243AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product :
- MOSFET Small Signal
- Number of Channels :
- 1
- JESD-30 Code :
- R-PSSO-F3
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Rise Time :
- 20ns
- Brand :
- Microchip Technology / Atmel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation (Max) :
- 1.6W (Ta)
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Number of Elements per Chip :
- 1
- MSL :
- MSL 1 - Unlimited
- Operating Mode :
- Depletion Mode
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 150mA, 0V
- Series :
- --
- Contact Plating :
- Tin
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- +150 °C
- HTS Code :
- 8541.90.00.00
- Length :
- 4.6mm
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 18 Weeks
- Mounting Style :
- SMD/SMT
- Number of Terminals :
- 3
- Vgs(th) (Max) @ Id :
- --
- Width :
- 2.6mm
- Manufacturer :
- Microchip
- Package / Case :
- TO-243AA
- Configuration :
- Single
- Surface Mount :
- yes
- FET Type :
- N-Channel
- Power Dissipation :
- 1.6W
- Peak Reflow Temperature (Cel) :
- 260
- Reach Compliance Code :
- Compliant
- Transistor Polarity :
- N-Channel
- Qualification :
- -
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 20 ns
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Subcategory :
- MOSFETs
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Height :
- 1.6mm
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Datasheets
- DN3535N8-G

N-Channel Tape & Reel (TR) 10 Ω @ 150mA, 0V ±20V 360pF @ 25V 350V TO-243AA
DN3535N8-G Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.5A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3535N8-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)
DN3535N8-G Applications
There are a lot of Microchip Technology
DN3535N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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