DN3535N8-G
- Mfr.Part #
- DN3535N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 230MA TO243AA
- Stock
- 43,647
- In Stock :
- 43,647
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- Microchip Technology / Atmel
- Drain to Source Breakdown Voltage :
- 350V
- Package Type :
- TO-243AA
- Length :
- 4.6mm
- Published :
- 2008
- Package / Case :
- TO-243AA
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- -55 °C
- Height :
- 1.6mm
- Mounting Style :
- SMD/SMT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- MSL :
- MSL 1 - Unlimited
- Reach Compliance Code :
- Compliant
- Channel Type :
- N
- Product Status :
- Active
- Maximum Operating Temperature :
- +150 °C
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 18 Weeks
- Subcategory :
- MOSFETs
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product :
- MOSFET Small Signal
- Drain to Source Voltage (Vdss) :
- 350V
- Power Dissipation :
- 1.6W
- Type :
- FET
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-F3
- Continuous Drain Current Id :
- 230
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- --
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 150mA, 0V
- Number of Terminals :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 15 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Width :
- 2.6mm
- FET Type :
- N-Channel
- Terminal Form :
- Flat
- Terminal Position :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- N-Channel
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 1.6W (Ta)
- Continuous Drain Current (ID) :
- 230mA
- Drain-source On Resistance-Max :
- 10 Ω
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Contact Plating :
- Tin
- RoHS :
- Details
- Series :
- --
- Manufacturer :
- Microchip
- Operating Mode :
- Depletion Mode
- Turn-Off Delay Time :
- 20 ns
- REACH SVHC :
- No SVHC
- FET Feature :
- Depletion Mode
- Rise Time :
- 20ns
- Fall Time (Typ) :
- 20 ns
- JEDEC-95 Code :
- TO-243AA
- Transistor Type :
- 1 N-Channel
- Transistor Polarity :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Package Shape :
- RECTANGULAR
- Channel Mode :
- Depletion
- Configuration :
- Single
- Qualification :
- -
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 1.6W Ta
- Product Type :
- MOSFET
- Weight :
- 52.786812mg
- Current - Continuous Drain (Id) @ 25°C :
- 230mA Tj
- Number of Channels :
- 1
- Case Connection :
- DRAIN
- HTS Code :
- 8541.90.00.00
- Base Product Number :
- DN3535
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Pin Count :
- 4
- Lead Free :
- Lead Free
- Supplier Device Package :
- TO-243AA (SOT-89)
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Number of Elements per Chip :
- 1
- Datasheets
- DN3535N8-G

N-Channel Tape & Reel (TR) 10 Ω @ 150mA, 0V ±20V 360pF @ 25V 350V TO-243AA
DN3535N8-G Overview
The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.5A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.
DN3535N8-G Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)
DN3535N8-G Applications
There are a lot of Microchip Technology
DN3535N8-G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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