DN3535N8-G

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Mfr.Part #
DN3535N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 350V 230MA TO243AA
Stock
43,647
In Stock :
43,647

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
Microchip Technology / Atmel
Drain to Source Breakdown Voltage :
350V
Package Type :
TO-243AA
Length :
4.6mm
Published :
2008
Package / Case :
TO-243AA
Number of Terminations :
3
Minimum Operating Temperature :
-55 °C
Height :
1.6mm
Mounting Style :
SMD/SMT
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
MSL :
MSL 1 - Unlimited
Reach Compliance Code :
Compliant
Channel Type :
N
Product Status :
Active
Maximum Operating Temperature :
+150 °C
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
20V
Time@Peak Reflow Temperature-Max (s) :
40
Factory Lead Time :
18 Weeks
Subcategory :
MOSFETs
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product :
MOSFET Small Signal
Drain to Source Voltage (Vdss) :
350V
Power Dissipation :
1.6W
Type :
FET
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Mount :
Surface Mount
Number of Elements :
1
Transistor Element Material :
SILICON
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PSSO-F3
Continuous Drain Current Id :
230
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
--
Mounting Type :
Surface Mount
Surface Mount :
yes
Rds On (Max) @ Id, Vgs :
10 Ω @ 150mA, 0V
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
15 ns
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Width :
2.6mm
FET Type :
N-Channel
Terminal Form :
Flat
Terminal Position :
Single
Terminal Finish :
Matte Tin (Sn)
Polarity/Channel Type :
N-Channel
Product Category :
MOSFET
ECCN Code :
EAR99
Power Dissipation (Max) :
1.6W (Ta)
Continuous Drain Current (ID) :
230mA
Drain-source On Resistance-Max :
10 Ω
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Contact Plating :
Tin
RoHS :
Details
Series :
--
Manufacturer :
Microchip
Operating Mode :
Depletion Mode
Turn-Off Delay Time :
20 ns
REACH SVHC :
No SVHC
FET Feature :
Depletion Mode
Rise Time :
20ns
Fall Time (Typ) :
20 ns
JEDEC-95 Code :
TO-243AA
Transistor Type :
1 N-Channel
Transistor Polarity :
N-Channel
Peak Reflow Temperature (Cel) :
260
Package Shape :
RECTANGULAR
Channel Mode :
Depletion
Configuration :
Single
Qualification :
-
Number of Pins :
3
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Power Dissipation-Max :
1.6W Ta
Product Type :
MOSFET
Weight :
52.786812mg
Current - Continuous Drain (Id) @ 25°C :
230mA Tj
Number of Channels :
1
Case Connection :
DRAIN
HTS Code :
8541.90.00.00
Base Product Number :
DN3535
Drive Voltage (Max Rds On,Min Rds On) :
0V
Additional Feature :
HIGH INPUT IMPEDANCE
Pin Count :
4
Lead Free :
Lead Free
Supplier Device Package :
TO-243AA (SOT-89)
Pulsed Drain Current-Max (IDM) :
0.5A
Number of Elements per Chip :
1
Datasheets
DN3535N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN3535N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Terminations:3, Type:FET, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1, DN3535N8-G pinout, DN3535N8-G datasheet PDF, DN3535N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN3535N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN3535N8-G


N-Channel Tape & Reel (TR) 10 Ω @ 150mA, 0V ±20V 360pF @ 25V 350V TO-243AA

DN3535N8-G Overview


The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 230mA.When VGS=350V, and ID flows to VDS at 350VVDS, the drain-source breakdown voltage is 350V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 0.5A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 350V in order to operate.Using drive voltage (0V), this device helps reduce its power consumption.

DN3535N8-G Features


a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)


DN3535N8-G Applications


There are a lot of Microchip Technology
DN3535N8-G applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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