DN2540N5-G
- Mfr.Part #
- DN2540N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 500MA TO220-3
- Stock
- 7,158
- In Stock :
- 7,158
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Type :
- Power MOSFET
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 10.67mm
- JEDEC-95 Code :
- TO-220AB
- Product Type :
- MOSFET
- ECCN Code :
- EAR99
- Rise Time :
- 15ns
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Continuous Drain Current (ID) :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Threshold Voltage :
- -1.5V
- Operating Mode :
- Depletion Mode
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Terminal Form :
- THROUGH-HOLE
- Radiation Hardening :
- No
- Operating Temp Range :
- -55C to 150C
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Supplier Device Package :
- TO-220-3
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 400V
- FET Feature :
- Depletion Mode
- Weight :
- 6.000006g
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Drain-Source On-Volt :
- 400(V)
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Qualification :
- -
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Turn-Off Delay Time :
- 15 ns
- Brand :
- Microchip Technology / Atmel
- Base Product Number :
- DN2540
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 15W (Tc)
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- +150 °C
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- Number of Elements :
- 1
- Number of Elements per Chip :
- 1
- Pin Count :
- 3 +Tab
- Power Dissipation :
- 15W
- JESD-30 Code :
- R-PSFM-T3
- Additional Feature :
- LOW THRESHOLD
- RoHS :
- Details
- Qualification Status :
- Not Qualified
- Published :
- 2013
- Continuous Drain Current Id :
- 500
- Channel Type :
- N Channel
- MSL :
- -
- Height :
- 22.86mm
- Fall Time (Typ) :
- 20 ns
- REACH SVHC :
- No SVHC
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max (Abs) :
- 15 W
- Width :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Factory Lead Time :
- 5 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 10 ns
- Surface Mount :
- No
- Package Type :
- TO-220
- Package :
- Tube
- Manufacturer :
- Microchip
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 25 Ω
- Mounting :
- Through Hole
- Number of Channels :
- 1
- Terminal Position :
- Single
- Continuous Drain Current :
- 0.5(A)
- Case Connection :
- DRAIN
- Terminal Finish :
- MATTE TIN
- Gate-Source Voltage (Max) :
- ±20(V)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package Shape :
- RECTANGULAR
- Rad Hardened :
- No
- Packaging :
- Tube
- Polarity :
- N
- Product Status :
- Active
- Configuration :
- Single
- Product Category :
- MOSFET
- Series :
- --
- Drain to Source Voltage (Vdss) :
- 400V
- Vgs(th) (Max) @ Id :
- --
- Power Dissipation-Max :
- 15W Tc
- Transistor Application :
- SWITCHING
- Minimum Operating Temperature :
- -55 °C
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Operating Temperature Classification :
- Military
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- Mounting Style :
- Through Hole
- Channel Mode :
- Depletion
- Datasheets
- DN2540N5-G
DN2540N5-G Documents

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3
DN2540N5-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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