DN2540N5-G

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Mfr.Part #
DN2540N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 500MA TO220-3
Stock
7,158
In Stock :
7,158

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Type :
Power MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Length :
10.67mm
JEDEC-95 Code :
TO-220AB
Product Type :
MOSFET
ECCN Code :
EAR99
Rise Time :
15ns
Number of Terminations :
3
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Continuous Drain Current (ID) :
500mA
Operating Temperature :
-55°C~150°C TJ
Threshold Voltage :
-1.5V
Operating Mode :
Depletion Mode
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Terminal Form :
THROUGH-HOLE
Radiation Hardening :
No
Operating Temp Range :
-55C to 150C
Pulsed Drain Current-Max (IDM) :
0.5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Supplier Device Package :
TO-220-3
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
400V
FET Feature :
Depletion Mode
Weight :
6.000006g
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Drain-Source On-Volt :
400(V)
Element Configuration :
Single
Mounting Type :
Through Hole
Qualification :
-
Drain Current-Max (Abs) (ID) :
0.5A
Turn-Off Delay Time :
15 ns
Brand :
Microchip Technology / Atmel
Base Product Number :
DN2540
Package / Case :
TO-220-3
Power Dissipation (Max) :
15W (Tc)
Vgs (Max) :
±20V
Maximum Operating Temperature :
+150 °C
Number of Pins :
3
HTS Code :
8541.29.00.95
Number of Elements :
1
Number of Elements per Chip :
1
Pin Count :
3 +Tab
Power Dissipation :
15W
JESD-30 Code :
R-PSFM-T3
Additional Feature :
LOW THRESHOLD
RoHS :
Details
Qualification Status :
Not Qualified
Published :
2013
Continuous Drain Current Id :
500
Channel Type :
N Channel
MSL :
-
Height :
22.86mm
Fall Time (Typ) :
20 ns
REACH SVHC :
No SVHC
Transistor Polarity :
N-Channel
Power Dissipation-Max (Abs) :
15 W
Width :
4.83mm
Drive Voltage (Max Rds On,Min Rds On) :
0V
Number of Terminals :
3
FET Type :
N-Channel
Factory Lead Time :
5 Weeks
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
10 ns
Surface Mount :
No
Package Type :
TO-220
Package :
Tube
Manufacturer :
Microchip
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
25 Ω
Mounting :
Through Hole
Number of Channels :
1
Terminal Position :
Single
Continuous Drain Current :
0.5(A)
Case Connection :
DRAIN
Terminal Finish :
MATTE TIN
Gate-Source Voltage (Max) :
±20(V)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package Shape :
RECTANGULAR
Rad Hardened :
No
Packaging :
Tube
Polarity :
N
Product Status :
Active
Configuration :
Single
Product Category :
MOSFET
Series :
--
Drain to Source Voltage (Vdss) :
400V
Vgs(th) (Max) @ Id :
--
Power Dissipation-Max :
15W Tc
Transistor Application :
SWITCHING
Minimum Operating Temperature :
-55 °C
Reach Compliance Code :
Compliant
Mount :
Through Hole
Operating Temperature Classification :
Military
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
Mounting Style :
Through Hole
Channel Mode :
Depletion
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G from Chip IC,where excellence meets affordability. This product stands out with its Type:Power MOSFET, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Number of Channels:1, DN2540N5-G pinout, DN2540N5-G datasheet PDF, DN2540N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2540N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3

DN2540N5-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).

DN2540N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)


DN2540N5-G Applications


There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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