DN2540N5-G

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Mfr.Part #
DN2540N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 400V 500MA TO220-3
Stock
7,158
In Stock :
7,158

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
10 ns
Terminal Form :
THROUGH-HOLE
Minimum Operating Temperature :
-55 °C
Operating Mode :
Depletion Mode
Factory Lead Time :
5 Weeks
Gate to Source Voltage (Vgs) :
20V
Brand :
Microchip Technology / Atmel
Operating Temperature Classification :
Military
Drain-source On Resistance-Max :
25 Ω
Package Type :
TO-220
Drain to Source Voltage (Vdss) :
400V
Mounting Style :
Through Hole
Operating Temp Range :
-55C to 150C
Transistor Element Material :
SILICON
Package :
Tube
Power Dissipation-Max (Abs) :
15 W
Vgs (Max) :
±20V
Power Dissipation :
15W
Width :
4.83mm
Continuous Drain Current :
0.5(A)
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Terminal Finish :
MATTE TIN
Drive Voltage (Max Rds On,Min Rds On) :
0V
Continuous Drain Current (ID) :
500mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current Id :
500
Manufacturer :
Microchip
Supplier Device Package :
TO-220-3
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
MSL :
-
Channel Mode :
Depletion
Mounting :
Through Hole
FET Type :
N-Channel
Mounting Type :
Through Hole
Pulsed Drain Current-Max (IDM) :
0.5A
Qualification :
-
Package / Case :
TO-220-3
FET Feature :
Depletion Mode
Drain-Source On-Volt :
400(V)
Element Configuration :
Single
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Power Dissipation-Max :
15W Tc
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Number of Elements :
1
Product Type :
MOSFET
Qualification Status :
Not Qualified
Number of Channels :
1
Polarity :
N
Threshold Voltage :
-1.5V
Number of Elements per Chip :
1
Fall Time (Typ) :
20 ns
Channel Type :
N Channel
Gate-Source Voltage (Max) :
±20(V)
Surface Mount :
No
Drain to Source Breakdown Voltage :
400V
Number of Terminations :
3
Rad Hardened :
No
Length :
10.67mm
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
Product Status :
Active
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
JEDEC-95 Code :
TO-220AB
Vgs(th) (Max) @ Id :
--
Number of Terminals :
3
Rise Time :
15ns
Maximum Operating Temperature :
+150 °C
RoHS :
Details
Drain Current-Max (Abs) (ID) :
0.5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Base Product Number :
DN2540
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Transistor Type :
1 N-Channel
Height :
22.86mm
Power Dissipation (Max) :
15W (Tc)
Additional Feature :
LOW THRESHOLD
FET Technology :
METAL-OXIDE SEMICONDUCTOR
HTS Code :
8541.29.00.95
Lead Free :
Lead Free
Published :
2013
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Series :
--
Turn-Off Delay Time :
15 ns
JESD-30 Code :
R-PSFM-T3
Pin Count :
3 +Tab
Weight :
6.000006g
Packaging :
Tube
Transistor Polarity :
N-Channel
Case Connection :
DRAIN
Mount :
Through Hole
JESD-609 Code :
e3
Configuration :
Single
Type :
Power MOSFET
Datasheets
DN2540N5-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Channels:1, Number of Terminations:3, Number of Pins:3, Type:Power MOSFET, DN2540N5-G pinout, DN2540N5-G datasheet PDF, DN2540N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2540N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2540N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3

DN2540N5-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).

DN2540N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)


DN2540N5-G Applications


There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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