DN2540N5-G
- Mfr.Part #
- DN2540N5-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 500MA TO220-3
- Stock
- 7,158
- In Stock :
- 7,158
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 10 ns
- Terminal Form :
- THROUGH-HOLE
- Minimum Operating Temperature :
- -55 °C
- Operating Mode :
- Depletion Mode
- Factory Lead Time :
- 5 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Brand :
- Microchip Technology / Atmel
- Operating Temperature Classification :
- Military
- Drain-source On Resistance-Max :
- 25 Ω
- Package Type :
- TO-220
- Drain to Source Voltage (Vdss) :
- 400V
- Mounting Style :
- Through Hole
- Operating Temp Range :
- -55C to 150C
- Transistor Element Material :
- SILICON
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 15 W
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 15W
- Width :
- 4.83mm
- Continuous Drain Current :
- 0.5(A)
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Terminal Finish :
- MATTE TIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Continuous Drain Current (ID) :
- 500mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current Id :
- 500
- Manufacturer :
- Microchip
- Supplier Device Package :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- MSL :
- -
- Channel Mode :
- Depletion
- Mounting :
- Through Hole
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 0.5A
- Qualification :
- -
- Package / Case :
- TO-220-3
- FET Feature :
- Depletion Mode
- Drain-Source On-Volt :
- 400(V)
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 15W Tc
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Product Type :
- MOSFET
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1
- Polarity :
- N
- Threshold Voltage :
- -1.5V
- Number of Elements per Chip :
- 1
- Fall Time (Typ) :
- 20 ns
- Channel Type :
- N Channel
- Gate-Source Voltage (Max) :
- ±20(V)
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 400V
- Number of Terminations :
- 3
- Rad Hardened :
- No
- Length :
- 10.67mm
- Product Category :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Product Status :
- Active
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 25 Ω @ 120mA, 0V
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- --
- Number of Terminals :
- 3
- Rise Time :
- 15ns
- Maximum Operating Temperature :
- +150 °C
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 0.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Base Product Number :
- DN2540
- Current - Continuous Drain (Id) @ 25°C :
- 500mA Tj
- Transistor Type :
- 1 N-Channel
- Height :
- 22.86mm
- Power Dissipation (Max) :
- 15W (Tc)
- Additional Feature :
- LOW THRESHOLD
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- HTS Code :
- 8541.29.00.95
- Lead Free :
- Lead Free
- Published :
- 2013
- Reach Compliance Code :
- Compliant
- Package Shape :
- RECTANGULAR
- Series :
- --
- Turn-Off Delay Time :
- 15 ns
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3 +Tab
- Weight :
- 6.000006g
- Packaging :
- Tube
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Configuration :
- Single
- Type :
- Power MOSFET
- Datasheets
- DN2540N5-G

N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 400V TO-220-3
DN2540N5-G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 0.5A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1.5V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 0V volts (0V).
DN2540N5-G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a threshold voltage of -1.5V
a 400V drain to source voltage (Vdss)
DN2540N5-G Applications
There are a lot of Microchip Technology
DN2540N5-G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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