DN2530N8-G
- Mfr.Part #
- DN2530N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 200MA TO243AA
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 2.6mm
- Feedback Cap-Max (Crss) :
- 5 pF
- FET Feature :
- Depletion Mode
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Tj
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 150 C
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 150mA, 0V
- Power Dissipation-Max :
- 1.6W Ta
- Number of Pins :
- 3
- Brand :
- Microchip Technology / Atmel
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Number of Terminals :
- 3
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Published :
- 2013
- Operating Mode :
- Depletion Mode
- Power Dissipation (Max) :
- 1.6W (Ta)
- Supplier Device Package :
- TO-243AA (SOT-89)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- SMD/SMT
- DS Breakdown Voltage-Min :
- 300 V
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 15 ns
- Channel Mode :
- Depletion
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- Microchip
- Lead Free :
- Lead Free
- Channel Type :
- N
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Terminal Form :
- Flat
- Power Dissipation :
- 1.6W
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 300V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Number of Channels :
- 1
- JESD-30 Code :
- R-PSSO-F3
- Vgs(th) (Max) @ Id :
- --
- Minimum Operating Temperature :
- - 55 C
- Transistor Type :
- 1 N-Channel
- Reach Compliance Code :
- Compliant
- Product Category :
- MOSFET
- Turn On Delay Time :
- 10 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 18 Weeks
- JEDEC-95 Code :
- TO-243AA
- Drain Current-Max (Abs) (ID) :
- 0.2A
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Base Product Number :
- DN2530
- Transistor Polarity :
- N-Channel
- Product Status :
- Active
- Packaging :
- Tape and Reel (TR)
- Weight :
- 52.786812mg
- Continuous Drain Current Id :
- 200
- Continuous Drain Current (ID) :
- 200mA
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Product :
- MOSFET Small Signal
- Series :
- --
- Turn-Off Delay Time :
- 15 ns
- RoHS :
- Details
- Peak Reflow Temperature (Cel) :
- 260
- Product Type :
- MOSFET
- Drain to Source Breakdown Voltage :
- 300V
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Type :
- FET
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 12 Ω
- Height :
- 1.6mm
- Transistor Element Material :
- SILICON
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Rise Time :
- 15ns
- Length :
- 4.6mm
- Power Dissipation-Max (Abs) :
- 1.6 W
- Datasheets
- DN2530N8-G

N-Channel Tape & Reel (TR) 12 Ω @ 150mA, 0V ±20V 300pF @ 25V 300V TO-243AA
DN2530N8-G Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 300 V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (0V), this device contributes to a reduction in overall power consumption.
DN2530N8-G Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 15 ns
a 300V drain to source voltage (Vdss)
DN2530N8-G Applications
There are a lot of Microchip Technology
DN2530N8-G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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