DN2530N8-G

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Mfr.Part #
DN2530N8-G
Manufacturer
Microchip Technology
Package / Case
TO-243AA
Datasheet
Download
Description
MOSFET N-CH 300V 200MA TO243AA
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
15ns
Power Dissipation :
1.6W
Lead Free :
Lead Free
Published :
2013
Drain to Source Breakdown Voltage :
300V
Product Category :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
40
Brand :
Microchip Technology / Atmel
Mounting Style :
SMD/SMT
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Finish :
Matte Tin (Sn)
Radiation Hardening :
No
Power Dissipation-Max :
1.6W Ta
Series :
--
Mount :
Surface Mount
Minimum Operating Temperature :
- 55 C
FET Type :
N-Channel
Qualification Status :
Not Qualified
FET Feature :
Depletion Mode
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-243AA
Product Status :
Active
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
--
Packaging :
Tape and Reel (TR)
Operating Mode :
Depletion Mode
RoHS :
Details
Feedback Cap-Max (Crss) :
5 pF
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Number of Pins :
3
Product :
MOSFET Small Signal
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
1.6W (Ta)
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1
Case Connection :
DRAIN
Manufacturer :
Microchip
Vgs (Max) :
±20V
Rds On (Max) @ Id, Vgs :
12 Ω @ 150mA, 0V
Turn On Delay Time :
10 ns
Turn-Off Delay Time :
15 ns
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-F3
Drain to Source Voltage (Vdss) :
300V
REACH SVHC :
No SVHC
Channel Type :
N
Factory Lead Time :
18 Weeks
Drain-source On Resistance-Max :
12 Ω
JESD-609 Code :
e3
Contact Plating :
Tin
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Width :
2.6mm
Height :
1.6mm
DS Breakdown Voltage-Min :
300 V
Polarity/Channel Type :
N-Channel
Continuous Drain Current Id :
200
Surface Mount :
yes
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Maximum Operating Temperature :
+ 150 C
Length :
4.6mm
Continuous Drain Current (ID) :
200mA
Configuration :
Single
Base Product Number :
DN2530
Element Configuration :
Single
JEDEC-95 Code :
TO-243AA
Transistor Application :
SWITCHING
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Channel Mode :
Depletion
Weight :
52.786812mg
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
0.2A
Power Dissipation-Max (Abs) :
1.6 W
Number of Elements :
1
Type :
FET
Supplier Device Package :
TO-243AA (SOT-89)
Number of Terminals :
3
Fall Time (Typ) :
15 ns
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
200mA Tj
Terminal Form :
Flat
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
0V
Datasheets
DN2530N8-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2530N8-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Terminations:3, Type:FET, DN2530N8-G pinout, DN2530N8-G datasheet PDF, DN2530N8-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2530N8-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2530N8-G


N-Channel Tape & Reel (TR) 12 Ω @ 150mA, 0V ±20V 300pF @ 25V 300V TO-243AA

DN2530N8-G Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 200mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 300V, and this device has a drainage-to-source breakdown voltage of 300VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 300 V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (0V), this device contributes to a reduction in overall power consumption.

DN2530N8-G Features


a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 15 ns
a 300V drain to source voltage (Vdss)


DN2530N8-G Applications


There are a lot of Microchip Technology
DN2530N8-G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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