DN2535N3-G-P013

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Microchip

Packaging :

Tape and Box (TB)

Operating Mode :

Depletion Mode

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

Continuous Drain Current Id :

0.12

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

120mA

Transistor Element Material :

SILICON

Weight :

453.59237mg

Number of Terminations :

3

Subcategory :

MOSFETs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Drain-source On Resistance-Max :

25 Ω

Product Status :

Active

Product Category :

MOSFET

Number of Elements :

1

RoHS :

Details

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

FET Type :

N-Channel

Series :

--

Terminal Position :

BOTTOM

Channel Type :

N

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-92

Product Type :

MOSFET

Package Shape :

Round

Current - Continuous Drain (Id) @ 25°C :

120mA Tj

Published :

2013

JESD-30 Code :

O-PBCY-T3

Factory Lead Time :

5 Weeks

Vgs(th) (Max) @ Id :

--

Drive Voltage (Max Rds On,Min Rds On) :

0V

Number of Channels :

1

Drain to Source Breakdown Voltage :

350V

Reach Compliance Code :

Compliant

Package :

Tape and Box (TB)

Power Dissipation (Max) :

1W (Tc)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

1W Tc

Feedback Cap-Max (Crss) :

5 pF

Brand :

Microchip Technology

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-92 (TO-226)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

25 Ω @ 120mA, 0V

Drain to Source Voltage (Vdss) :

350V

Mount :

Through Hole

Mounting Style :

Through Hole

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Surface Mount :

No

FET Feature :

Depletion Mode

ECCN Code :

EAR99

Base Product Number :

DN2535

Number of Terminals :

3