DN2535N5-G

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Mfr.Part #
DN2535N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 350V 500MA TO220-3
Stock
5,203
In Stock :
5,203

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
MATTE TIN
REACH SVHC :
No SVHC
Turn On Delay Time :
10 ns
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-220AB
Case Connection :
DRAIN
Product Category :
MOSFET
Published :
2008
Length :
10.67mm
JESD-609 Code :
e3
Rise Time :
15ns
Factory Lead Time :
5 Weeks
Terminal Position :
Single
Channel Mode :
Depletion
Width :
4.83mm
Mounting :
Through Hole
Pulsed Drain Current-Max (IDM) :
0.5A
Polarity :
N
Continuous Drain Current :
0.5(A)
Series :
--
Number of Terminals :
3
Number of Pins :
3
Package Type :
TO-220
Packaging :
Tube
Element Configuration :
Single
Contact Plating :
Tin
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Fall Time (Typ) :
20 ns
Operating Temp Range :
-55C to 150C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
--
Weight :
6.000006g
Transistor Polarity :
N-Channel
Drain to Source Voltage (Vdss) :
350V
Operating Mode :
Depletion Mode
JESD-30 Code :
R-PSFM-T3
FET Feature :
Depletion Mode
Power Dissipation (Max) :
15W (Tc)
Continuous Drain Current Id :
500
Drain-source On Resistance-Max :
25 Ω
Power Dissipation-Max :
15W Tc
Product Type :
MOSFET
Package / Case :
TO-220-3
Number of Terminations :
3
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
FET Type :
N-Channel
Mounting Type :
Through Hole
Number of Elements :
1
Continuous Drain Current (ID) :
500mA
Type :
Power MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rad Hardened :
No
Power Dissipation-Max (Abs) :
15 W
Maximum Operating Temperature :
+ 150 C
Reach Compliance Code :
Compliant
Power Dissipation :
15W
Product Status :
Active
Package :
Tube
Height :
9.02mm
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Channel Type :
N
Manufacturer :
Microchip
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
Gate to Source Voltage (Vgs) :
20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Channels :
1
Base Product Number :
DN2535
Supplier Device Package :
TO-220-3
RoHS :
Details
Brand :
Microchip Technology / Atmel
Turn-Off Delay Time :
15 ns
Gate-Source Voltage (Max) :
±20(V)
Drive Voltage (Max Rds On,Min Rds On) :
0V
Drain to Source Breakdown Voltage :
350V
Pin Count :
3 +Tab
Transistor Element Material :
SILICON
Configuration :
Single
Mount :
Through Hole
Drain-Source On-Volt :
350(V)
Additional Feature :
LOW THRESHOLD
Drain Current-Max (Abs) (ID) :
0.5A
Transistor Type :
1 N-Channel
ECCN Code :
EAR99
Minimum Operating Temperature :
- 55 C
Lead Free :
Lead Free
Terminal Form :
THROUGH-HOLE
Polarity/Channel Type :
N-Channel
Operating Temperature Classification :
Military
Vgs (Max) :
±20V
Datasheets
DN2535N5-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2535N5-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, Type:Power MOSFET, Number of Channels:1, DN2535N5-G pinout, DN2535N5-G datasheet PDF, DN2535N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2535N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2535N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 350V TO-220-3

DN2535N5-G Overview


A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 500mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 350V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 0.5A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 350V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (0V).

DN2535N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)


DN2535N5-G Applications


There are a lot of Microchip Technology
DN2535N5-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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