DN2535N5-G

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Mfr.Part #
DN2535N5-G
Manufacturer
Microchip Technology
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 350V 500MA TO220-3
Stock
5,203
In Stock :
5,203

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Manufacturer :
Microchip
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Base Product Number :
DN2535
Maximum Operating Temperature :
+ 150 C
Lead Free :
Lead Free
Gate-Source Voltage (Max) :
±20(V)
Drain to Source Breakdown Voltage :
350V
Rad Hardened :
No
Product Type :
MOSFET
Power Dissipation-Max :
15W Tc
JESD-30 Code :
R-PSFM-T3
Series :
--
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 25V
Polarity :
N
Minimum Operating Temperature :
- 55 C
JEDEC-95 Code :
TO-220AB
Height :
9.02mm
Package :
Tube
Published :
2008
Number of Pins :
3
RoHS :
Details
Weight :
6.000006g
Continuous Drain Current :
0.5(A)
Product Status :
Active
Transistor Element Material :
SILICON
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Transistor Polarity :
N-Channel
Vgs (Max) :
±20V
Turn On Delay Time :
10 ns
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
0.5A
Operating Temp Range :
-55C to 150C
Operating Mode :
Depletion Mode
Package Type :
TO-220
FET Type :
N-Channel
Continuous Drain Current Id :
500
Mounting :
Through Hole
Pulsed Drain Current-Max (IDM) :
0.5A
REACH SVHC :
No SVHC
Turn-Off Delay Time :
15 ns
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Mounting Style :
Through Hole
Rise Time :
15ns
Operating Temperature Classification :
Military
Drain-source On Resistance-Max :
25 Ω
JESD-609 Code :
e3
Channel Mode :
Depletion
Drive Voltage (Max Rds On,Min Rds On) :
0V
Configuration :
Single
Packaging :
Tube
Power Dissipation (Max) :
15W (Tc)
FET Feature :
Depletion Mode
Rds On (Max) @ Id, Vgs :
25 Ω @ 120mA, 0V
Number of Channels :
1
Surface Mount :
No
Additional Feature :
LOW THRESHOLD
Length :
10.67mm
Package / Case :
TO-220-3
Number of Terminations :
3
Transistor Application :
SWITCHING
Reach Compliance Code :
Compliant
Transistor Type :
1 N-Channel
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Product Category :
MOSFET
Brand :
Microchip Technology / Atmel
Terminal Finish :
MATTE TIN
Channel Type :
N
Drain to Source Voltage (Vdss) :
350V
Pin Count :
3 +Tab
Operating Temperature :
-55°C~150°C TJ
Type :
Power MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Fall Time (Typ) :
20 ns
Factory Lead Time :
5 Weeks
Supplier Device Package :
TO-220-3
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Mount :
Through Hole
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Continuous Drain Current (ID) :
500mA
Power Dissipation :
15W
Power Dissipation-Max (Abs) :
15 W
Drain-Source On-Volt :
350(V)
Width :
4.83mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
Number of Terminals :
3
Vgs(th) (Max) @ Id :
--
RoHS Status :
ROHS3 Compliant
Datasheets
DN2535N5-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology DN2535N5-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Mounting Type:Through Hole, DN2535N5-G pinout, DN2535N5-G datasheet PDF, DN2535N5-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology DN2535N5-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology DN2535N5-G


N-Channel Tube 25 Ω @ 120mA, 0V ±20V 300pF @ 25V 350V TO-220-3

DN2535N5-G Overview


A device's maximal input capacitance is 300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 500mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 350V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.5A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 0.5A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 350V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (0V).

DN2535N5-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 350V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 0.5A.
a 350V drain to source voltage (Vdss)


DN2535N5-G Applications


There are a lot of Microchip Technology
DN2535N5-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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