DN2530N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

15 ns

Channel Mode :

Depletion

Weight :

453.59237mg

Channel Type :

N

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Height :

5.33mm

Turn On Delay Time :

10 ns

Length :

5.21mm

Terminal Position :

BOTTOM

Continuous Drain Current (ID) :

175mA

Lead Free :

Lead Free

Minimum Operating Temperature :

-55 °C

Brand :

Microchip Technology / Atmel

Mounting Style :

Through Hole

Packaging :

Bulk

Power Dissipation :

740mW

Power Dissipation-Max (Abs) :

0.74 W

Configuration :

Single

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Feedback Cap-Max (Crss) :

5 pF

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Terminal Form :

Wire

Gate to Source Voltage (Vgs) :

20V

HTS Code :

8541.21.00.95

RoHS :

Details

Base Product Number :

DN2530

Transistor Type :

1 N-Channel

FET Feature :

Depletion Mode

Published :

2013

Product Category :

MOSFET

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Product :

MOSFET Small Signal

ECCN Code :

EAR99

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

0V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Terminations :

3

Number of Terminals :

3

Maximum Operating Temperature :

+150 °C

Rds On (Max) @ Id, Vgs :

12 Ω @ 150mA, 0V

Polarity/Channel Type :

N-Channel

Rise Time :

15ns

Surface Mount :

No

Manufacturer :

Microchip

Power Dissipation (Max) :

740mW (Ta)

Product Status :

Active

MSL :

-

JESD-30 Code :

O-PBCY-W3

Type :

FET

Drain to Source Breakdown Voltage :

300V

Pin Count :

3

Operating Mode :

Depletion Mode

JEDEC-95 Code :

TO-92

Vgs (Max) :

±20V

Number of Pins :

3

Number of Elements per Chip :

1

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Package Type :

TO-92

Drain to Source Voltage (Vdss) :

300V

Number of Elements :

1

Width :

4.19mm

FET Type :

N-Channel

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

175mA Tj

DS Breakdown Voltage-Min :

300 V

Reach Compliance Code :

Compliant

Power Dissipation-Max :

740mW Ta

Factory Lead Time :

6 Weeks

Series :

--

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

TO-92 (TO-226)

Mount :

Through Hole

Vgs(th) (Max) @ Id :

--

Package :

Bag

Package Shape :

Round

Continuous Drain Current Id :

175

Qualification :

-

Drain-source On Resistance-Max :

12 Ω