DN2535N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

Round

Weight :

453.59237mg

Height :

5.33mm

Contact Plating :

Tin

Number of Elements :

1

Vgs (Max) :

±20V

Power Dissipation-Max (Abs) :

1 W

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

120mA

Qualification Status :

Not Qualified

Type :

Power MOSFET

JESD-609 Code :

e3

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Mounting :

Through Hole

Number of Elements per Chip :

1

Supplier Device Package :

TO-92 (TO-226)

JEDEC-95 Code :

TO-92

Peak Reflow Temperature (Cel) :

Not Applicable

Continuous Drain Current Id :

120

Operating Temperature :

-55°C~150°C TJ

Feedback Cap-Max (Crss) :

5 pF

Width :

4.19mm

Number of Channels :

1

Drain-source On Resistance-Max :

25 Ω

Drain-Source On-Volt :

350(V)

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

REACH SVHC :

No SVHC

Continuous Drain Current :

0.12(A)

Factory Lead Time :

5 Weeks

Vgs(th) (Max) @ Id :

--

Gate-Source Voltage (Max) :

±20(V)

Drain to Source Breakdown Voltage :

350V

Rad Hardened :

No

Maximum Operating Temperature :

+150 °C

Published :

2008

Operating Temp Range :

-55C to 150C

Configuration :

Single

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

25 Ω @ 120mA, 0V

Radiation Hardening :

No

Power Dissipation-Max :

1W Tc

Element Configuration :

Single

DS Breakdown Voltage-Min :

350 V

Base Product Number :

DN2535

Packaging :

Bulk

Product Type :

MOSFET

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature Classification :

Military

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

120mA Tj

Manufacturer :

Microchip

Drive Voltage (Max Rds On,Min Rds On) :

0V

Power Dissipation (Max) :

1W (Tc)

Transistor Application :

SWITCHING

Brand :

Microchip Technology / Atmel

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

ECCN Code :

EAR99

Number of Terminals :

3

Turn-Off Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Type :

TO-92

Series :

--

FET Feature :

Depletion Mode

Package :

Bag

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

RoHS :

Details

Additional Feature :

HIGH INPUT IMPEDANCE

Channel Type :

N

Channel Mode :

Depletion

Power Dissipation :

1W

Operating Mode :

Depletion Mode

Gate to Source Voltage (Vgs) :

20V

Product Category :

MOSFET

Number of Pins :

3

JESD-30 Code :

O-PBCY-T3

Drain to Source Voltage (Vdss) :

350V

Rise Time :

15ns

Number of Terminations :

3

Fall Time (Typ) :

20 ns

Pin Count :

3

Mounting Type :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Length :

5.21mm

Terminal Finish :

Matte Tin (Sn)

Polarity :

N

Lead Free :

Lead Free

Minimum Operating Temperature :

-55 °C