DN2535N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current Id :

120

Fall Time (Typ) :

20 ns

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

0V

Number of Pins :

3

Rad Hardened :

No

Operating Mode :

Depletion Mode

Drain to Source Breakdown Voltage :

350V

Transistor Type :

1 N-Channel

Lead Free :

Lead Free

Height :

5.33mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

ECCN Code :

EAR99

Turn On Delay Time :

10 ns

Additional Feature :

HIGH INPUT IMPEDANCE

Drain-source On Resistance-Max :

25 Ω

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Power Dissipation-Max :

1W Tc

Continuous Drain Current :

0.12(A)

Surface Mount :

No

Radiation Hardening :

No

Package Type :

TO-92

Mounting :

Through Hole

RoHS :

Details

DS Breakdown Voltage-Min :

350 V

Terminal Form :

THROUGH-HOLE

Maximum Operating Temperature :

+150 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Type :

Power MOSFET

Transistor Polarity :

N-Channel

FET Feature :

Depletion Mode

Weight :

453.59237mg

Brand :

Microchip Technology / Atmel

JESD-30 Code :

O-PBCY-T3

Manufacturer :

Microchip

Factory Lead Time :

5 Weeks

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

120mA

Transistor Element Material :

SILICON

Width :

4.19mm

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

120mA Tj

Polarity :

N

Transistor Application :

SWITCHING

Length :

5.21mm

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Elements per Chip :

1

Rise Time :

15ns

Minimum Operating Temperature :

-55 °C

Drain to Source Voltage (Vdss) :

350V

Gate-Source Voltage (Max) :

±20(V)

Number of Terminals :

3

Supplier Device Package :

TO-92 (TO-226)

Packaging :

Bulk

Channel Mode :

Depletion

Operating Temp Range :

-55C to 150C

Contact Plating :

Tin

Terminal Position :

BOTTOM

Configuration :

Single

Published :

2008

Drain-Source On-Volt :

350(V)

Package Shape :

Round

Feedback Cap-Max (Crss) :

5 pF

Mount :

Through Hole

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

1 W

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-92

Reach Compliance Code :

Compliant

Number of Elements :

1

Mounting Type :

Through Hole

Channel Type :

N

Base Product Number :

DN2535

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Package :

Bag

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

25 Ω @ 120mA, 0V

Power Dissipation (Max) :

1W (Tc)

Number of Channels :

1

Product Type :

MOSFET

Pin Count :

3

Series :

--

Vgs(th) (Max) @ Id :

--

Product Status :

Active

JESD-609 Code :

e3

Operating Temperature Classification :

Military

FET Type :

N-Channel

Mounting Style :

Through Hole

Power Dissipation :

1W