DMP57D5UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

400mW

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

160mA

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON

Length :

1.6mm

Base Part Number :

DMP57D5UV

Gate to Source Voltage (Vgs) :

8V

FET Type :

2 P-Channel (Dual)

Additional Feature :

High Reliability

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Height :

600μm

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

50V

Input Capacitance (Ciss) (Max) @ Vds :

29pF @ 25V

Number of Terminations :

6

ECCN Code :

EAR99

Element Configuration :

Dual

Width :

1.2mm

Drain to Source Breakdown Voltage :

-50V

Lead Free :

Lead Free

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Flat

Radiation Hardening :

No

JESD-609 Code :

e3

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Max Power Dissipation :

400mW

Drain-source On Resistance-Max :

6Ohm

Number of Pins :

6

Pin Count :

6

Pbfree Code :

yes

Weight :

3.005049mg

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 4V