DMP56D0UFB-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

50.54pF @ 25V

Factory Lead Time :

15 Weeks

Vgs (Max) :

±8V

FET Type :

P-Channel

Rise Time :

6.63ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Radiation Hardening :

No

Mount :

Surface Mount

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

8V

Drain Current-Max (Abs) (ID) :

0.2A

Published :

2013

Power Dissipation-Max :

425mW Ta

Fall Time (Typ) :

15 ns

Number of Pins :

3

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Drain to Source Voltage (Vdss) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 4V

Continuous Drain Current (ID) :

200mA

Turn-Off Delay Time :

21.9 ns

Gate Charge (Qg) (Max) @ Vgs :

0.58nC @ 4V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Turn On Delay Time :

4.46 ns

Package / Case :

3-UFDFN