DMP510DL-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2015

Continuous Drain Current (ID) :

180mA

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

50V

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

24.6pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

0.18A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

50V

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Terminations :

3

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Factory Lead Time :

14 Weeks

Terminal Finish :

Matte Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

FET Type :

P-Channel

Reference Standard :

AEC-Q101

Power Dissipation-Max :

310mW Ta