DMP510DL-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

FET Type :

P-Channel

DS Breakdown Voltage-Min :

50V

Drain to Source Voltage (Vdss) :

50V

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

180mA

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

5V

JESD-30 Code :

R-PDSO-G3

Vgs(th) (Max) @ Id :

2V @ 1mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

310mW Ta

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Reference Standard :

AEC-Q101

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.18A

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±30V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

24.6pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

ECCN Code :

EAR99