DMP57D5UFB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Power Dissipation-Max :

425mW Ta

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e4

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

50V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

P-Channel

Power Dissipation :

425mW

Width :

600μm

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

1mm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 4V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

8V

Case Connection :

DRAIN

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Elements :

1

Resistance :

8Ohm

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Drain to Source Breakdown Voltage :

-50V

Transistor Application :

SWITCHING

Number of Channels :

1

Lead Free :

Lead Free

Published :

2012

Vgs (Max) :

±8V

Drain Current-Max (Abs) (ID) :

0.2A

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Terminal Position :

BOTTOM

Height :

470μm

Input Capacitance (Ciss) (Max) @ Vds :

29pF @ 4V

Continuous Drain Current (ID) :

200mA

Package / Case :

3-UFDFN