DMN67D8L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation-Max :

340mW Ta

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

Continuous Drain Current (ID) :

210mA

Published :

2014

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

210mA Ta

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Terminal Position :

Dual

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.82nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Reference Standard :

AEC-Q101

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

0.21A

Drain-source On Resistance-Max :

5Ohm

RoHS Status :

ROHS3 Compliant

Number of Pins :

3