DMN67D8L-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-G3

Additional Feature :

High Reliability

ECCN Code :

EAR99

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.21A

Current - Continuous Drain (Id) @ 25°C :

210mA Ta

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

5Ohm

Continuous Drain Current (ID) :

210mA

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Voltage (Vdss) :

60V

Power Dissipation-Max :

340mW Ta

Mount :

Surface Mount

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Elements :

1

Vgs (Max) :

±30V

Published :

2015

FET Type :

N-Channel

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

DS Breakdown Voltage-Min :

60V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

JESD-609 Code :

e3

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

5 Ω @ 500mA, 10V

Gate Charge (Qg) (Max) @ Vgs :

0.82nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant