DMN66D0LW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Turn-Off Delay Time :

33 ns

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

Factory Lead Time :

5 Weeks

Turn On Delay Time :

10 ns

Height :

1mm

ECCN Code :

EAR99

Number of Pins :

3

Mount :

Surface Mount

Length :

2.15mm

Number of Elements :

1

Drain to Source Voltage (Vdss) :

60V

Package / Case :

SC-70, SOT-323

DS Breakdown Voltage-Min :

60V

Element Configuration :

Single

JESD-609 Code :

e3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Radiation Hardening :

No

Weight :

6.010099mg

Width :

1.3mm

Number of Channels :

1

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

200mW Ta

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Additional Feature :

High Reliability

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

6Ohm

Continuous Drain Current (ID) :

115mA

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

6 Ω @ 115mA, 5V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V