DMN66D0LT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

800μm

Mount :

Surface Mount

Number of Pins :

3

Number of Terminations :

3

Continuous Drain Current (ID) :

115mA

Transistor Element Material :

SILICON

Length :

1.6mm

Package / Case :

SOT-523

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Power Dissipation :

200mW

Turn-Off Delay Time :

33 ns

Weight :

2.012816mg

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5 Ω @ 115mA, 10V

REACH SVHC :

No SVHC

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

200mW Ta

Element Configuration :

Single

Pin Count :

3

Drain-source On Resistance-Max :

6Ohm

Height :

750μm

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Turn On Delay Time :

10 ns

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

ECCN Code :

EAR99

Published :

2008

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

115mA Ta

Vgs(th) (Max) @ Id :

2V @ 250μA

DS Breakdown Voltage-Min :

60V

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Number of Elements :

1