DMN65D8LW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3 Ω @ 115mA, 10V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

300mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Published :

2012

FET Type :

N-Channel

Length :

2.2mm

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Power Dissipation-Max :

300mW Ta

Radiation Hardening :

No

Rise Time :

2.8ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Terminal Position :

Dual

Height :

1mm

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Turn-Off Delay Time :

12.6 ns

Drain-source On Resistance-Max :

4Ohm

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Turn On Delay Time :

2.7 ns

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Number of Pins :

3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

16 Weeks

Drain Current-Max (Abs) (ID) :

0.26A

Weight :

6.010099mg

Fall Time (Typ) :

7.3 ns

Transistor Element Material :

SILICON

Number of Channels :

1

Package / Case :

SC-70, SOT-323

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

0.87nC @ 10V

Number of Terminations :

3

Width :

1.35mm