DMN65D8LV-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Diodes Incorporated

Power Dissipation (Max) :

370mW (Ta)

Rds On (Max) @ Id, Vgs :

3Ohm @ 115mA, 10V

Current - Continuous Drain (Id) @ 25°C :

310mA (Ta)

Transistor Polarity :

N-Channel

Base Product Number :

DMN65

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

FET Type :

N-Channel

Packaging :

Cut Tape

Package :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.87 nC @ 10 V

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Configuration :

Single

Supplier Device Package :

SOT-23-3

Rise Time :

2.8 ns

Mounting Style :

SMD/SMT

Brand :

Diodes Incorporated

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

Drain to Source Voltage (Vdss) :

60 V

Input Capacitance (Ciss) (Max) @ Vds :

22 pF @ 25 V

FET Feature :

-

Subcategory :

MOSFETs

Series :

-

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3