DMN65D8LFB-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 25V

Number of Channels :

1

Vgs (Max) :

±20V

Power Dissipation-Max :

430mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

0.26A

Mounting Type :

Surface Mount

Radiation Hardening :

No

Published :

2015

ECCN Code :

EAR99

Mount :

Surface Mount

Number of Terminations :

3

Additional Feature :

High Reliability

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Package / Case :

3-UFDFN

Drain-source On Resistance-Max :

4Ohm

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Rise Time :

3.15ns

Number of Pins :

3

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e4

Number of Elements :

1

Fall Time (Typ) :

6.29 ns

Turn On Delay Time :

3.27 ns

Factory Lead Time :

23 Weeks

Rds On (Max) @ Id, Vgs :

3 Ω @ 115mA, 10V

Power Dissipation :

840mW

Pin Count :

3

Terminal Position :

BOTTOM

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

260mA Ta

Turn-Off Delay Time :

12.025 ns

Continuous Drain Current (ID) :

400mA

Operating Temperature :

-55°C~150°C TJ