DMN65D8L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

310mA

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Published :

2013

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Channels :

1

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Power Dissipation-Max :

370mW Ta

ECCN Code :

EAR99

Length :

3mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain Current-Max (Abs) (ID) :

0.27A

Number of Terminations :

3

Power Dissipation :

540mW

Drain-source On Resistance-Max :

4Ohm

Gate Charge (Qg) (Max) @ Vgs :

0.87nC @ 10V

Rds On (Max) @ Id, Vgs :

3 Ω @ 115mA, 10V

Turn On Delay Time :

2.7 ns

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Threshold Voltage :

2V

Height :

1.1mm

Additional Feature :

High Reliability

Rise Time :

2.8ns

Terminal Form :

Gull wing

Width :

1.4mm

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Turn-Off Delay Time :

12.6 ns

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Weight :

7.994566mg

Vgs(th) (Max) @ Id :

2V @ 250μA