DMN65D8L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Transistor Element Material :

SILICON

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

60V

FET Type :

N-Channel

Power Dissipation-Max :

370mW Ta

Continuous Drain Current (ID) :

310mA

Lead Free :

Lead Free

Element Configuration :

Single

Drain-source On Resistance-Max :

4Ohm

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Factory Lead Time :

14 Weeks

Turn-Off Delay Time :

12.6 ns

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-609 Code :

e3

Number of Elements :

1

Transistor Application :

SWITCHING

Published :

2013

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

Power Dissipation :

540mW

Height :

1.1mm

Drain Current-Max (Abs) (ID) :

0.27A

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

0.87nC @ 10V

Vgs (Max) :

±20V

Turn On Delay Time :

2.7 ns

Rds On (Max) @ Id, Vgs :

3 Ω @ 115mA, 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Weight :

7.994566mg

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Mounting Type :

Surface Mount

Length :

3mm

Rise Time :

2.8ns

Threshold Voltage :

2V

Additional Feature :

High Reliability

Width :

1.4mm