DMN63D8LW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Reference Standard :

AEC-Q101

Published :

2015

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

300mW Ta

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 250mA, 10V

Transistor Application :

SWITCHING

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

380mA Ta

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

380mA

JESD-609 Code :

e3

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

0.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

23.2pF @ 25V

ECCN Code :

EAR99

Terminal Position :

Dual

Factory Lead Time :

14 Weeks

Drain Current-Max (Abs) (ID) :

0.38A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

4.5Ohm

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PDSO-G3

Package / Case :

SC-70, SOT-323