DMN62D1LFD-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn On Delay Time :

2.1 ns

JESD-609 Code :

e4

Continuous Drain Current (ID) :

400mA

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

0.55nC @ 4.5V

FET Type :

N-Channel

Turn-Off Delay Time :

21 ns

Capacitance :

32pF

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Power Dissipation-Max :

500mW Ta

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

2 Ω @ 100mA, 4V

Drain to Source Breakdown Voltage :

60V

Published :

2014

Mounting Type :

Surface Mount

Factory Lead Time :

22 Weeks

ECCN Code :

EAR99

Element Configuration :

Single

Fall Time (Typ) :

13.9 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Package / Case :

3-UDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

2.8ns