DMN62D1LFD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

500mW Ta

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

22 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 25V

Mounting Type :

Surface Mount

Element Configuration :

Single

Published :

2014

Mount :

Surface Mount

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

400mA

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Capacitance :

32pF

Turn-Off Delay Time :

21 ns

Turn On Delay Time :

2.1 ns

Number of Channels :

1

Rise Time :

2.8ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4V

Vgs(th) (Max) @ Id :

1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Fall Time (Typ) :

13.9 ns

Gate Charge (Qg) (Max) @ Vgs :

0.55nC @ 4.5V

JESD-609 Code :

e4

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2 Ω @ 100mA, 4V

Package / Case :

3-UDFN