DMN62D0UW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Package / Case :

SC-70, SOT-323

Mount :

Surface Mount

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Factory Lead Time :

14 Weeks

JESD-30 Code :

R-PDSO-G3

JESD-609 Code :

e3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

60V

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Rds On (Max) @ Id, Vgs :

2 Ω @ 100mA, 4.5V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.34A

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

340mA Ta

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

340mA

Drain-source On Resistance-Max :

2Ohm

Published :

2014

Vgs (Max) :

±20V

Power Dissipation-Max :

320mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

32pF @ 30V