DMN62D0SFD-7
- Mfr.Part #
- DMN62D0SFD-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 540MA 3DFN
- Stock
- 81,367
- In Stock :
- 81,367
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 0.54A
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 540mA Ta
- Factory Lead Time :
- 14 Weeks
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn On Delay Time :
- 3.95 ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 16 ns
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 500mA, 10V
- Package / Case :
- 3-UDFN
- JESD-609 Code :
- e4
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Fall Time (Typ) :
- 9.04 ns
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 0.87nC @ 10V
- Additional Feature :
- HIGH RELIABILITY, LOW THRESHOLD
- Input Capacitance (Ciss) (Max) @ Vds :
- 30.2pF @ 25V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 430mW Ta
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 540mA
- Rise Time :
- 3.81ns
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.002Ohm
- ECCN Code :
- EAR99
- Datasheets
- DMN62D0SFD-7

N-Channel Tape & Reel (TR) 2 Ω @ 500mA, 10V ±20V 30.2pF @ 25V 0.87nC @ 10V 3-UDFN
DMN62D0SFD-7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 30.2pF @ 25V.This device conducts a continuous drain current (ID) of 540mA, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.54A.When the device is turned off, a turn-off delay time of 16 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3.95 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
DMN62D0SFD-7 Features
a continuous drain current (ID) of 540mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 16 ns
DMN62D0SFD-7 Applications
There are a lot of Diodes Incorporated
DMN62D0SFD-7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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