DMN62D0SFD-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Drain-source On Resistance-Max :

0.002Ohm

Rise Time :

3.81ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Power Dissipation-Max :

430mW Ta

REACH SVHC :

No SVHC

Package / Case :

3-UDFN

JESD-609 Code :

e4

Current - Continuous Drain (Id) @ 25°C :

540mA Ta

Turn-Off Delay Time :

16 ns

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single

ECCN Code :

EAR99

Number of Terminations :

3

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.87nC @ 10V

Mount :

Surface Mount

Pin Count :

3

Radiation Hardening :

No

Number of Pins :

3

Continuous Drain Current (ID) :

540mA

Drain Current-Max (Abs) (ID) :

0.54A

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

30.2pF @ 25V

Fall Time (Typ) :

9.04 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

3.95 ns

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Element Material :

SILICON

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD