DMN62D0LFD-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Continuous Drain Current (ID) :

310mA

Rise Time :

2.1ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

60V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Package / Case :

3-UDFN

Rds On (Max) @ Id, Vgs :

2 Ω @ 100mA, 4V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4V

Published :

2014

Turn-Off Delay Time :

18 ns

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

500nC @ 4.5V

Height :

480μm

Turn On Delay Time :

2.6 ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

8.7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Length :

1.25mm

Power Dissipation-Max :

480mW Ta

Mount :

Surface Mount

Width :

1.25mm

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance (Ciss) (Max) @ Vds :

31pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Vgs (Max) :

±20V