DMN62D0LFB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

Pin Count :

3

Rise Time :

3.4ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4V

Fall Time (Typ) :

16.3 ns

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

2 Ω @ 100mA, 4V

Number of Pins :

3

Lead Free :

Lead Free

Power Dissipation-Max :

470mW Ta

Case Connection :

DRAIN

FET Type :

N-Channel

Radiation Hardening :

No

ECCN Code :

EAR99

Power Dissipation :

470mW

Current - Continuous Drain (Id) @ 25°C :

100mA Ta

Turn On Delay Time :

3.4 ns

Published :

2011

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Pbfree Code :

yes

Turn-Off Delay Time :

26.4 ns

Feedback Cap-Max (Crss) :

6 pF

JESD-609 Code :

e4

Gate Charge (Qg) (Max) @ Vgs :

0.45nC @ 4.5V

Contact Plating :

Gold

DS Breakdown Voltage-Min :

60V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

32pF @ 25V

Package / Case :

3-UFDFN

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Position :

BOTTOM

Number of Terminations :

3

Element Configuration :

Single

Drain-source On Resistance-Max :

2Ohm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

100mA

Vgs (Max) :

±20V

Number of Channels :

1

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ