DMN6069SE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

22 Weeks

Terminal Position :

Dual

Surface Mount :

yes

ECCN Code :

EAR99

Power Dissipation-Max :

2.2W Ta

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

4.3A

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

69m Ω @ 3A, 10V

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta 10A Tc

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 30V

Transistor Element Material :

SILICON

Number of Elements :

1

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2014

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

25A

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

4

Drain-source On Resistance-Max :

0.069Ohm

Series :

Automotive, AEC-Q101

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-G4

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-261-4, TO-261AA