DMN6068SE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

No

Power Dissipation :

3.7W

Rise Time :

10.8ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation-Max :

2W Ta

REACH SVHC :

No SVHC

Turn On Delay Time :

3.6 ns

Height :

1.65mm

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Continuous Drain Current (ID) :

5.6A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

502pF @ 30V

Transistor Application :

SWITCHING

Length :

6.7mm

Lead Free :

Lead Free

Terminal Form :

Gull wing

Pin Count :

4

Width :

3.7mm

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

20.8A

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Additional Feature :

High Reliability

JESD-30 Code :

R-PDSO-G4

Factory Lead Time :

16 Weeks

Package / Case :

TO-261-4, TO-261AA

Rds On (Max) @ Id, Vgs :

68m Ω @ 12A, 10V

Drain to Source Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Resistance :

68mOhm

Gate Charge (Qg) (Max) @ Vgs :

10.3nC @ 10V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

37.5 mJ

Fall Time (Typ) :

8.7 ns

Case Connection :

DRAIN

Weight :

7.994566mg

Contact Plating :

Tin

Turn-Off Delay Time :

11.9 ns

Element Configuration :

Single

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V