DMN6066SSSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Terminals :

8

Terminal Finish :

Matte Tin (Sn)

Brand :

Diodes Incorporated

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

JESD-30 Code :

R-PDSO-G8

Polarity/Channel Type :

N-Channel

Package :

Tape and Reel (TR)

Terminal Form :

Gull wing

Product Type :

MOSFET

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

10.3 nC @ 10 V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.066 Ω

Drain to Source Voltage (Vdss) :

60 V

Subcategory :

MOSFETs

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant

Product Category :

MOSFET

Rds On (Max) @ Id, Vgs :

66mOhm @ 4.5A, 10V

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

1.56W (Ta)

Operating Temperature :

-55°C ~ 150°C (TJ)

Reference Standard :

AEC-Q101

Supplier Device Package :

8-SOP

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

502 pF @ 30 V

Vgs (Max) :

±20V

Additional Feature :

High Reliability

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Product Status :

Active

DS Breakdown Voltage-Min :

60 V

FET Feature :

-

Technology :

Si

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Packaging :

MouseReel

Current - Continuous Drain (Id) @ 25°C :

3.7A (Ta)