DMN6066SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

73.992255mg

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

66m Ω @ 4.5A, 10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

3.7A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

2.4ns

Power Dissipation-Max :

1.56W Ta

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

502pF @ 30V

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Vgs (Max) :

±20V

Pin Count :

8

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

10.3nC @ 10V

Pbfree Code :

yes

Number of Channels :

2

Factory Lead Time :

16 Weeks

Height :

1.5mm

Turn On Delay Time :

2.7 ns

Number of Pins :

8

Turn-Off Delay Time :

14.7 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

5.4 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain-source On Resistance-Max :

0.066Ohm

Width :

4mm

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

REACH SVHC :

No SVHC

Length :

5mm

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

5A

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA