DMN5L06VAK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2 Ω @ 50mA, 5V

FET Feature :

Logic Level Gate

Height :

600μm

Weight :

3.005049mg

Number of Pins :

6

Continuous Drain Current (ID) :

280mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

3Ohm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Power Dissipation :

250mW

Gate to Source Voltage (Vgs) :

20V

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1V @ 250μA

Lead Free :

Lead Free

Number of Terminations :

6

Width :

1.2mm

Feedback Cap-Max (Crss) :

5 pF

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Published :

2011

JESD-609 Code :

e3

Base Part Number :

DMN5L06VAK

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

50V

Number of Elements :

2

Factory Lead Time :

19 Weeks

Max Power Dissipation :

250mW

REACH SVHC :

No SVHC

Element Configuration :

Dual

Length :

1.6mm

FET Type :

2 N-Channel (Dual)

Pin Count :

6

Drain to Source Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Radiation Hardening :

No

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)