DMN53D0LDW-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

19 ns

Packaging :

Tape and Reel (TR)

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Weight :

6.010099mg

Rise Time :

2.5ns

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

50V

Fall Time (Typ) :

11 ns

Mount :

Surface Mount

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Drain to Source Voltage (Vdss) :

50V

Continuous Drain Current (ID) :

360mA

Element Configuration :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 25V

Turn On Delay Time :

2.7 ns

Max Power Dissipation :

310mW

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)