DMN53D0LQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

22 Weeks

Drain to Source Voltage (Vdss) :

50V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn) - annealed

JESD-609 Code :

e3

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.5A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation-Max :

370mW Ta

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Continuous Drain Current (ID) :

500mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

46pF @ 25V

Published :

2016

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Additional Feature :

High Reliability

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

50V

JESD-30 Code :

R-PDSO-G3

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.6 Ω @ 500mA, 10V

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Terminal Position :

Dual

HTS Code :

8541.21.00.95

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Number of Terminations :

3