DMN53D0U-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

0.6nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 5V

Continuous Drain Current (ID) :

300mA

Weight :

7.994566mg

Drain-source On Resistance-Max :

3Ohm

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Fall Time (Typ) :

14 ns

Mount :

Surface Mount

Turn-Off Delay Time :

21 ns

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Factory Lead Time :

22 Weeks

Turn On Delay Time :

2.1 ns

Input Capacitance (Ciss) (Max) @ Vds :

37.1pF @ 25V

Gate to Source Voltage (Vgs) :

12V

Vgs (Max) :

±12V

Mounting Type :

Surface Mount

Published :

2014

JESD-30 Code :

R-PDSO-G3

Drain to Source Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Additional Feature :

High Reliability

Rise Time :

2.8ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2 Ω @ 50mA, 5V

Power Dissipation-Max :

520mW Ta

Terminal Position :

Dual

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

0.3A