DMN5L06DMKQ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

DS Breakdown Voltage-Min :

50V

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Package / Case :

SOT-23-6

Vgs(th) (Max) @ Id :

1V @ 250μA

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

2 Ω @ 50mA, 5V

Number of Elements :

2

FET Feature :

Standard

Drain-source On Resistance-Max :

3Ohm

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

50V

Continuous Drain Current (ID) :

305mA

Feedback Cap-Max (Crss) :

5 pF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

400mW

Transistor Element Material :

SILICON

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

0.305A

JESD-30 Code :

R-PDSO-G6

Operating Temperature :

-65°C~150°C TJ

Factory Lead Time :

16 Weeks

Max Power Dissipation :

400mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6