DMN32D2LDF-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Mount :

Surface Mount

Package / Case :

5-TSSOP, SC-70-5, SOT-353

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

400mA

Published :

2008

Length :

2.2mm

FET Feature :

Logic Level Gate

Number of Channels :

2

Gate to Source Voltage (Vgs) :

10V

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual) Common Source

Input Capacitance (Ciss) (Max) @ Vds :

39pF @ 3V

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Pin Count :

5

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 100mA, 4V

Pbfree Code :

yes

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

5

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

280mW

Width :

1.35mm

Number of Terminations :

5

Height :

1mm

Drain Current-Max (Abs) (ID) :

0.4A