DMN3005LK3-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

14.5A Ta

Published :

2013

Continuous Drain Current (ID) :

14.5A

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Terminal Position :

Single

Number of Terminations :

2

Turn-Off Delay Time :

73.4 ns

Pin Count :

4

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

48A

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

22.8ns

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

4342pF @ 15V

Weight :

3.949996g

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Application :

SWITCHING

Radiation Hardening :

No

Power Dissipation-Max :

1.68W Ta

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

7.9 ns

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

22A

Fall Time (Typ) :

43.5 ns

Pbfree Code :

No

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0065ohm

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

46.9nC @ 4.5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Additional Feature :

High Reliability