DMN3009LFV-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

60A

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 30A, 10V

JESD-30 Code :

S-PDSO-F5

Case Connection :

DRAIN

Terminal Form :

Flat

Drain-source On Resistance-Max :

0.0055Ohm

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Number of Elements :

1

Power Dissipation-Max :

2W Ta

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerVDFN

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Surface Mount

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 15V