DMN3135LVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

13.1 ns

Drain Current-Max (Abs) (ID) :

3.3A

Number of Elements :

1

Fall Time (Typ) :

2.5 ns

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Rise Time :

4.6ns

Number of Channels :

2

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Pin Count :

6

REACH SVHC :

No SVHC

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 4.5V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

60m Ω @ 3.1A, 10V

Drain-source On Resistance-Max :

0.047Ohm

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Factory Lead Time :

15 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 15V

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

840mW

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Turn On Delay Time :

2.6 ns

Mount :

Surface Mount

Number of Pins :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Continuous Drain Current (ID) :

3.5A

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing