DMN3035LWN-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

770mW

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2V @ 250μA

Power - Max :

770mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

JESD-609 Code :

e4

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

9.9nC @ 10V

Continuous Drain Current (ID) :

5.5A

Package / Case :

8-PowerVDFN

FET Feature :

Standard

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

399pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain-source On Resistance-Max :

0.035Ohm

JESD-30 Code :

R-PDSO-N6

Factory Lead Time :

14 Weeks

Terminal Form :

NO LEAD

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

35m Ω @ 4.8A, 10V

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2015