DMN3024LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Max Power Dissipation :

1.8W

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Rise Time :

3.3ns

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

2.9 ns

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

16 ns

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

6.8A

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

8 ns

Published :

2009

Packaging :

Digi-Reel®

Gate to Source Voltage (Vgs) :

20V

Base Part Number :

DMN3024LSD

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

7.2A

Drain Current-Max (Abs) (ID) :

5.7A

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

608pF @ 15V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

17 Weeks

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12.9nC @ 10V

Weight :

73.992255mg

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Mount :

Surface Mount

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260