DMG4800LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

26.33 ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.17W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

3.95mm

Gate to Source Voltage (Vgs) :

25V

Threshold Voltage :

1.6V

Mounting Type :

Surface Mount

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

16m Ω @ 9A, 10V

Number of Terminations :

8

Rise Time :

4.5ns

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Published :

2011

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

8.56nC @ 5V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.016Ohm

Input Capacitance (Ciss) (Max) @ Vds :

798pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Fall Time (Typ) :

8.55 ns

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5.03 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Continuous Drain Current (ID) :

7.5A

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Number of Pins :

8

Factory Lead Time :

16 Weeks

Packaging :

Cut Tape (CT)

Base Part Number :

DMG4800LSD

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - annealed

Pin Count :

8

Length :

4.95mm

Height :

1.7mm

Max Junction Temperature (Tj) :

150°C

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Max Power Dissipation :

1.17W

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Weight :

73.992255mg

Additional Feature :

High Reliability