DMG4468LFG

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Rise Time :

14.53ns

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

15m Ω @ 11.6A, 10V

Radiation Hardening :

No

Number of Pins :

8

REACH SVHC :

No SVHC

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

ECCN Code :

EAR99

Continuous Drain Current (ID) :

7.62A

Fall Time (Typ) :

6.01 ns

Package / Case :

8-PowerUDFN

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Number of Elements :

1

JESD-609 Code :

e4

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

867pF @ 10V

Pbfree Code :

yes

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Published :

2009

FET Type :

N-Channel

Turn-Off Delay Time :

18.84 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-N5

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

18.85nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

7.62A Ta

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

6 Weeks

Turn On Delay Time :

5.46 ns

Power Dissipation-Max :

990mW Ta