DMG4466SSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation :

1.42W

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Terminal Form :

Gull wing

Width :

3.95mm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

478.9pF @ 15V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.023Ohm

Height :

1.5mm

Mount :

Surface Mount

Turn-Off Delay Time :

14.6 ns

ECCN Code :

EAR99

Turn On Delay Time :

2.9 ns

Fall Time (Typ) :

3.1 ns

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

60A

Length :

4.95mm

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Factory Lead Time :

15 Weeks

Pin Count :

8

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Number of Terminations :

8

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Published :

2017

Element Configuration :

Single

Weight :

73.992255mg

Continuous Drain Current (ID) :

10A

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Rise Time :

7.9ns

Packaging :

Cut Tape (CT)

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.42W Ta

Number of Pins :

8

Pbfree Code :

yes

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

23m Ω @ 10A, 10V