DME375A

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

55V

Max Power Dissipation :

875W

Pbfree Code :

No

Max Collector Current :

30A

ECCN Code :

EAR99

JESD-609 Code :

e0

JESD-30 Code :

R-CDFM-F2

Published :

1997

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Emitter Base Voltage (VEBO) :

4V

Configuration :

Single

Factory Lead Time :

22 Weeks

Frequency - Transition :

1.025GHz~1.15GHz

Output Power :

375W

Operating Temperature :

200°C TJ

Radiation Hardening :

No

Package / Case :

55AW

Frequency :

1.15GHz

Packaging :

Bulk

Transistor Application :

AMPLIFIER

Number of Terminations :

2

Collector Emitter Breakdown Voltage :

55V

Lead Free :

Lead Free

Power Dissipation :

875W

Number of Elements :

1

Pin Count :

2

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA 5V

Terminal Position :

Dual

Polarity/Channel Type :

NPN

Terminal Form :

Flat

Gain :

6.5dB

Mount :

Chassis Mount, Screw

Transistor Type :

NPN

Mounting Type :

Chassis Mount