DME375A

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

JESD-609 Code :

e0

Number of Terminations :

2

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

1.025GHz~1.15GHz

Configuration :

Single

Collector Emitter Voltage (VCEO) :

55V

Lead Free :

Lead Free

Pin Count :

2

Emitter Base Voltage (VEBO) :

4V

Max Power Dissipation :

875W

Power Dissipation :

875W

Factory Lead Time :

22 Weeks

Number of Elements :

1

Number of Pins :

3

Collector Emitter Breakdown Voltage :

55V

Output Power :

375W

Gain :

6.5dB

Transistor Element Material :

SILICON

Pbfree Code :

No

Mounting Type :

Chassis Mount

Polarity/Channel Type :

NPN

RoHS Status :

RoHS Compliant

Transistor Application :

AMPLIFIER

Packaging :

Bulk

Operating Temperature :

200°C TJ

Terminal Form :

Flat

Terminal Finish :

TIN LEAD

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 300mA 5V

ECCN Code :

EAR99

Published :

1997

Terminal Position :

Dual

Frequency :

1.15GHz

JESD-30 Code :

R-CDFM-F2

Mount :

Chassis Mount, Screw

Max Collector Current :

30A

Package / Case :

55AW