DMC3028LSDX-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Number of Pins :

8

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

5.5A

Input Capacitance (Ciss) (Max) @ Vds :

641pF @ 15V

Transistor Element Material :

SILICON

Weight :

73.992255mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

5.8A

Fall Time (Typ) :

40.4 ns

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

30V

Rise Time :

17.1ns

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Factory Lead Time :

23 Weeks

Number of Terminations :

8

Turn On Delay Time :

9.7 ns

Terminal Position :

Dual

Height :

1.5mm

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

60.5 ns

Max Power Dissipation :

1.2W

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 10V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Published :

2015

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

5.5A 5.8A

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Channels :

2

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

27m Ω @ 6A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

30V

Width :

3.95mm

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

4.95mm

Transistor Application :

SWITCHING