DMC3025LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Length :

4.95mm

Drain Current-Max (Abs) (ID) :

5.3A

Mount :

Surface Mount

Published :

2012

Number of Pins :

8

Width :

3.95mm

Rise Time :

4.9ns

Peak Reflow Temperature (Cel) :

260

FET Type :

N and P-Channel

Turn-Off Delay Time :

28.4 ns

Base Part Number :

DMC3025

Lead Free :

Lead Free

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Weight :

73.992255mg

Max Power Dissipation :

1.2W

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

4.2A

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

12.4 ns

Rds On (Max) @ Id, Vgs :

20m Ω @ 7.4A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Finish :

Matte Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Cut Tape (CT)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Channels :

2

Number of Terminations :

8

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

6.5A 4.2A

Reference Standard :

AEC-Q101

Turn On Delay Time :

6.8 ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

501pF @ 15V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-30V

FET Feature :

Logic Level Gate

Factory Lead Time :

17 Weeks

Gate to Source Voltage (Vgs) :

20V

Height :

1.5mm

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

High Reliability

Gate Charge (Qg) (Max) @ Vgs :

9.8nC @ 10V