DMC3016LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

17.1ns

Max Power Dissipation :

1.2W

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1415pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

30

Reference Standard :

AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Terminal Form :

Gull wing

Number of Channels :

2

Fall Time (Typ) :

40.4 ns

Turn On Delay Time :

9.7 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

6.2A

Number of Pins :

8

FET Type :

N and P-Channel

Weight :

73.992255mg

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Turn-Off Delay Time :

60.5 ns

Additional Feature :

High Reliability

Mount :

Surface Mount

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

25.1nC @ 10V

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

16m Ω @ 12A, 10V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

8.2A 6.2A

Published :

2015

Factory Lead Time :

23 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.016Ohm

Number of Elements :

2