DCX56-16-13

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Mfr.Part #
DCX56-16-13
Manufacturer
Diodes Incorporated
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 80V 1A SOT89-3
Stock
104
In Stock :
104

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Position :
Dual
Transition Frequency :
200MHz
Package / Case :
TO-243AA
Pin Count :
4
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Element Configuration :
Single
Frequency :
200MHz
Terminal Finish :
Matte Tin (Sn)
Number of Pins :
4
Case Connection :
COLLECTOR
hFE Min :
63
Mounting Type :
Surface Mount
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Published :
2007
Mount :
Surface Mount
Collector Emitter Breakdown Voltage :
80V
Height :
1.5mm
Number of Elements :
1
Polarity/Channel Type :
NPN
Packaging :
Cut Tape (CT)
Length :
4.5mm
Width :
2.48mm
Base Part Number :
DCX56
Factory Lead Time :
9 Weeks
Power Dissipation :
1W
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Max Power Dissipation :
1W
Collector Base Voltage (VCBO) :
100V
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Max Collector Current :
1A
Terminal Form :
Flat
Current - Collector Cutoff (Max) :
100nA ICBO
Radiation Hardening :
No
Transistor Type :
NPN
Emitter Base Voltage (VEBO) :
5V
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
4
Collector Emitter Voltage (VCEO) :
80V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain Bandwidth Product :
200MHz
Weight :
51.993025mg
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Max Breakdown Voltage :
80V
Datasheets
DCX56-16-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DCX56-16-13 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Mounting Type:Surface Mount, Base Part Number:DCX56, Number of Terminations:4, DCX56-16-13 pinout, DCX56-16-13 datasheet PDF, DCX56-16-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DCX56-16-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DCX56-16-13


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-243AA Cut Tape (CT) Surface Mount

DCX56-16-13 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.

DCX56-16-13 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


DCX56-16-13 Applications


There are a lot of Diodes Incorporated
DCX56-16-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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